1 - 4 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c20a i dm t c = 25 c, pulse width limited by t jm 80 a i ar 20 a e ar t c = 25 c28mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 3.5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 260 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.15/10 nm/lb.in. weight 6g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s to-247 ad n-channel enhancement mode, hdmos tm family symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a24v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 ? v dss t j = 25 c25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 12 a 0.25 0.27 ? pulse test, t 300 s, duty cycle d 2 % megamos tm irfp 460 v dss = 500 v power mosfet i d(cont) = 20 a r ds(on) = 0.27 ? ? ? ? ? g = gate, d = drain, s = source, tab = drain features l repetitive avalanche energy rated l fast switching times l low r ds (on) hdmos tm process l rugged polysilicon gate cell structure l high commutating dv/dt rating applications l switching power supplies l motor controls 92825d (5/98) d (tab) ixys reserves the right to change limits, test conditions, and dimensions. www.datasheet.net/ datasheet pdf - http://www..co.kr/
2 - 4 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 12 a, pulse test 13 21 s c iss 4200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 450 pf c rss 135 pf t d(on) 23 35 ns t r v gs = 10 v, v ds = 250 v, i d = 20 a 81 120 ns t d(off) r g = 4.3 ?, (external) 85 130 ns t f 65 98 ns q g(on) 135 210 nc q gs v gs = 10 v, v ds = 200 v, i d = 20 a 28 40 nc q gd 62 110 nc r thjc 0.45 k/w r thck 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 20 a i sm repetitive; pulse width limited by t jm 80 a v sd i f = 20 a, v gs = 0 v, 1.8 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 20 a, -di/dt = 100 a/ s, v r = 100 v 570 860 ns q rr 5.7 c dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad outline terminals: 1 - gate 2 - drain 3 - source tab - drain irfp 460 1 2 3 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 www.datasheet.net/ datasheet pdf - http://www..co.kr/
3 - 4 ? 2000 ixys all rights reserved v gs - volts 02468 i d - amperes 0 4 8 12 16 20 24 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 1 2 3 4 5 6 t c - degrees c -50-25 0 255075100125150 i d - amperes 0 5 10 15 20 25 v ds - volts 0 4 8 121620 i d - amperes 0 10 20 30 v ds - volts 0 4 8 12 16 20 i d - amperes 0 10 20 30 40 50 5v t j = 125 o c v gs = 10v t j = 25 o c t j = 125 o c 6v 5v 6v v gs =10v 9v 8v 7v v gs =10v 9v 8v 7v i d = 24a t j = 25 o c i d - amperes 0 1020304050 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 tj=125 0 c tj=25 0 c v gs = 10v i d = 12a figure 2. output characteristics at 125 o c figure 1. output characteristics at 25 o c figure 5. drain current vs. case temperature figure 6. admittance curves figure 3. r ds(on) normalized to value at i d = 12a figure 4. r ds(on) normalized to value at i d = 12a irfp 460 www.datasheet.net/ datasheet pdf - http://www..co.kr/
4 - 4 ? 2000 ixys all rights reserved figure 8. capacitance curves figure 7. gate charge figure 9. source current vs. source to drain voltage figure 11. transient thermal resistance figure10. forward bias safe operating area v ds - volts 10 100 i d - amperes 0. 1 1 10 100 pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.01 0.1 1 v ds - volts 0 5 10 15 20 25 capacitance - pf 100 250 500 1000 2500 5000 v sd - volts 0.2 0.4 0.6 0.8 1.0 1.2 i d - amperes 0 10 20 30 40 50 gate charge - nc 0 50 100 150 200 v gs - volts 0 2 4 6 8 10 12 crss coss ciss v ds = 400v i d = 15a f = 1mhz t c = 25 o c 10ms 1ms 100ms dc t j = 125 o c single pulse 0.1ms t j = 25 o c 500 irfp 460 www.datasheet.net/ datasheet pdf - http://www..co.kr/
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